首页|期刊导航|半导体学报(英文版)|Enhancing performance of inverted quantum-dot light-emitting diodes based on a solution-processed hole transport layer via ligand treatment
半导体学报(英文版)2023,Vol.44Issue(9):68-74,7.DOI:10.1088/1674-4926/44/9/092603
Enhancing performance of inverted quantum-dot light-emitting diodes based on a solution-processed hole transport layer via ligand treatment
Enhancing performance of inverted quantum-dot light-emitting diodes based on a solution-processed hole transport layer via ligand treatment
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关键词
quantum dots/quantum-dot light-emitting diodes/inverted structure/ligand treatmentKey words
quantum dots/quantum-dot light-emitting diodes/inverted structure/ligand treatment引用本文复制引用
Depeng Li,Kai Wang,Xiaowei Sun,Jingrui Ma,Wenbo Liu,Guohong Xiang,Xiangwei Qu,Siqi Jia,Mi Gu,Jiahao Wei,Pai Liu..Enhancing performance of inverted quantum-dot light-emitting diodes based on a solution-processed hole transport layer via ligand treatment[J].半导体学报(英文版),2023,44(9):68-74,7.基金项目
This work was supported by the National Key Research and Development Program of China(Nos.2021YFB3602703,2022YFB3606504,and 2022YFB3602903),National Natural Sci-ence Foundation of China(No.62122034),Guangdong Univer-sity Key Laboratory for Advanced Quantum Dot Displays and Lighting(No.2017KSYS007),and Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting(No.ZDSYS201707281632549),Shenzhen Science and Technol-ogy Program(No.JCYJ20220818100411025),and Shenzhen Development and Reform Commission Project(No.XMHT20220114005). (Nos.2021YFB3602703,2022YFB3606504,and 2022YFB3602903)