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High Responsivity and Ultra-Low Detection Limits in Nonlinear a-Si:H p-i-n Photodiodes Enabled by Photogating

Andreas BABLICH Maurice MüLLER Rainer BORNEMANN Andreas NACHTIGAL Peter HARING BOLíVAR

光子传感器（英文版）2023，Vol.13Issue(4)：27-38,12.

光子传感器（英文版）2023，Vol.13Issue(4)：27-38,12.DOI:10.1007/s13320-023-0689-6

High Responsivity and Ultra-Low Detection Limits in Nonlinear a-Si:H p-i-n Photodiodes Enabled by Photogating

Andreas BABLICH ¹Maurice MüLLER ²Rainer BORNEMANN ²Andreas NACHTIGAL ²Peter HARING BOLíVAR²

作者信息

1. Institute of Graphene-Based Nanotechnology,University of Siegen,Hölderlinstr.3,57076 Siegen,Germany
2. Institute of High Frequency and Quantum Electronics,University of Siegen,Hölderlinstr.3,57076 Siegen,Germany
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摘要

关键词

Photogating/amorphous silicon a-Si:H/nonlinearity/photodetector/responsivity gain

Key words

Photogating/amorphous silicon a-Si:H/nonlinearity/photodetector/responsivity gain

引用本文复制引用

Andreas BABLICH,Maurice MüLLER,Rainer BORNEMANN,Andreas NACHTIGAL,Peter HARING BOLíVAR..High Responsivity and Ultra-Low Detection Limits in Nonlinear a-Si:H p-i-n Photodiodes Enabled by Photogating[J].光子传感器（英文版）,2023,13(4):27-38,12.

基金项目

This work has received funding from the German Description Fund for Regional Development(Grant No.EFRE0200545)for the execution of the project and from DFG(Grant No.INST 221/131-1)for utilizing the instruments of the Micro and Nanoanalytics Facility(MNaF)for microscopy. （Grant No.EFRE0200545）

光子传感器（英文版）

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ISSN：1674-9251

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