物理化学学报2023，Vol.39Issue(10)：78-92,15.DOI:10.3866/PKU.WHXB202306043
高迁移率二维半导体Bi2O2Se的化学气相沉积生长:可控生长及材料质量
Chemical Vapor Deposition Growth of High-Mobility 2D Semiconductor Bi2O2Se:Controllability and Material Quality
摘要
Abstract
Two-dimensional(2D)semiconductors offer an atomic thickness that facilitates superior gate field penetration and enables transistors to maintain shrinking with suppressed short-channel effects,thereby being considered as channel materials for future transistors in the post-Moore era.As a member of high-mobility 2D semiconductors,the air-stable Bi2O2Se with a moderate bandgap has drawn significant attention.Distinguished from other 2D materials,Bi2O2Se can be oxidized layer-by-layer to form a high-k native-oxide dielectric,Bi2SeO5,with an atomically sharp interface,similar to Si/SiO2 in the semiconductor industry.These characteristics make Bi2O2Se an ideal material platform for fabricating various devices with excellent performance,such as transistors,thermoelectrics,optoelectronics,sensors,flexible devices and memory devices.To realize advanced applications of 2D Bi2O2Se,it is essential to develop scalable and high-quality preparation methods with relatively low cost.Chemical vapor deposition(CVD)has shown promise in meeting these requirements.Over the past years,CVD has been widely used to synthesize 2D Bi2O2Se despite some remaining challenges.In this review,we summarize the recent progress in the controlled growth of 2D Bi2O2Se via the CVD method.We begin by introducing the crystal structure and properties of Bi2O2Se.Next,we focus on the morphology control of 2D Bi2O2Se,including various nucleation modes and different dimensionalities by carefully manipulating the CVD process.In terms of nucleation modes,in-plane and vertical epitaxial growth of Bi2O2Se,achieved by controlling the interaction between epitaxial layer and substrate,are reviewed.Wafer-scale continuous Bi2O2Se film facilitates the device integration while vertical 2D fins pave the way for fabricating high-performance fin field-effect-transistors(FinFET).As for the dimensionality control,the transition from 2D nanoplates to 1D nanoribbons is investigated.Parameters such as precursor ratio,growth temperature and types of catalyst play a key role in such transition.We then discuss the construction of ordered arrays of Bi2O2Se with the above morphology by selective growth and post treatment for potential device integration.In addition,we highlight the electrical quality improvement of the grown material via defect control and strain release.For example,both the Se poor growth condition and the out-of-plane strain-free growth contribute to higher mobility of Bi2O2Se.Lastly,we propose potential strategies for precise control of Bi2O2Se structures and quality.In order to meet the demands of advanced electronic applications,more efforts are expected to made to achieve uniform,transferable and site-specific preparation of high-quality single-crystal Bi2O2Se on a large scale.关键词
Bi2O2Se/化学气相沉积/成核模式/维度/阵列/电学质量Key words
Bi2O2Se/Chemical vapor deposition/Nucleation mode/Dimensionality/Array/Electrical quality分类
化学引用本文复制引用
于梦诗,谭聪伟,高啸寅,唐浚川,彭海琳..高迁移率二维半导体Bi2O2Se的化学气相沉积生长:可控生长及材料质量[J].物理化学学报,2023,39(10):78-92,15.基金项目
The project was supported by the National Natural Science Foundation of China(21920102004,22205011,92164205),National Key Research & Development Program(2021YFA1202901),Beijing National Laboratory for Molecular Sciences(BNLMS-CXTD-202001),and the Tencent Foundation(The XPLORER PRIZE).国家自然科学基金(21920102004,22205011,92164205),国家重点研发计划(2021YFA1202901),北京分子科学国家实验室(BNLMS-CXTD-202001)及腾讯基金会(探索者奖)资助项目 （21920102004,22205011,92164205）
