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Perovskite solar cells with NiOx hole-transport layer

Mengjia Li Zuolin Zhang Jie Sun Fan Liu Jiangzhao Chen Liming Ding Cong Chen

半导体学报（英文版）2023，Vol.44Issue(10)：1-4,4.

半导体学报（英文版）2023，Vol.44Issue(10)：1-4,4.DOI:10.1088/1674-4926/44/10/100201

Perovskite solar cells with NiOx hole-transport layer

Mengjia Li ¹Zuolin Zhang ¹Jie Sun ²Fan Liu ³Jiangzhao Chen ⁴Liming Ding ²Cong Chen⁵

作者信息

1. State Key Laboratory of Reliability and Intelligence of Electrical Equipment,School of Materials Science and Engineering,Hebei University of Technology,Tianjin 300401,China
2. Center for Excellence in Nanoscience(CAS),Key Laboratory of Nanosystem and Hierarchical Fabrication(CAS),National Center for Nanoscience and Technology,Beijing 100190,China
3. Department of Chemical Engineering,Kansas State University,Manhattan,KS 66506,USA
4. Key Laboratory of Optoelectronic Technology & Systems(MoE),College of Optoelectronic Engineering,Chongqing University,Chongqing 400044,China
5. State Key Laboratory of Reliability and Intelligence of Electrical Equipment,School of Materials Science and Engineering,Hebei University of Technology,Tianjin 300401,China||Macao Institute of Materials Science and Engineering(MIMSE),Macau University of Science and Technology,Macau 999078,China
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摘要

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Mengjia Li,Zuolin Zhang,Jie Sun,Fan Liu,Jiangzhao Chen,Liming Ding,Cong Chen..Perovskite solar cells with NiOx hole-transport layer[J].半导体学报（英文版）,2023,44(10):1-4,4.

基金项目

This work was supported by the National Natural Sci-ence Foundation of China(62004058 and U21A2076),Natu-ral Science Foundation of Hebei Province(F2020202022),State Key Laboratory of Reliability and Intelligence of Electri-cal Equipment(EERI_PI20200005),S&T Program of Hebei(215676146H and 225676163GH),and Hebei Graduate Innova-tion Funding Project(CXZZBS2023037 and CXZZSS2023026).L.Ding thanks the National Key Research and Development Program of China(2022YFB3803300),the open research fund of Songshan Lake Materials Laboratory(2021SLABFK02),and the National Natural Science Foundation of China(21961160720). （62004058 and U21A2076）

半导体学报（英文版）

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ISSN：1674-4926

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