半导体学报（英文版）2023，Vol.44Issue(10)：23-32,10.DOI:10.1088/1674-4926/44/10/103101
GaAs-based resonant tunneling diode:Device aspects from design,manufacturing,characterization and applications
GaAs-based resonant tunneling diode:Device aspects from design,manufacturing,characterization and applications
Swagata Samanta1
作者信息
- 1. Department of Electronics and Communication Engineering,SRM University-AP,Andhra Pradesh,India
- 折叠
摘要
关键词
gallium arsenide/microfabrication/resonant tunneling devicesKey words
gallium arsenide/microfabrication/resonant tunneling devices引用本文复制引用
Swagata Samanta..GaAs-based resonant tunneling diode:Device aspects from design,manufacturing,characterization and applications[J].半导体学报（英文版）,2023,44(10):23-32,10.
