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Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser

Tianjiang He Suping Liu Wei Li Li Zhong Xiaoyu Ma Cong Xiong Nan Lin Zhennuo Wang

半导体学报（英文版）2023，Vol.44Issue(10)：65-71,7.
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半导体学报（英文版）2023，Vol.44Issue(10)：65-71,7.DOI:10.1088/1674-4926/44/10/102302

Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser

Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser

Tianjiang He 1Suping Liu 2Wei Li 1Li Zhong 1Xiaoyu Ma 1Cong Xiong 2Nan Lin 1Zhennuo Wang1

作者信息

  • 1. National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China||College of Materials Science and Optoelectronics,University of Chinese Academy of Sciences,Beijing 100049,China
  • 2. National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
  • 折叠

摘要

关键词

catastrophic optical damage/primary epitaxial structure/impurity-free vacancy disordering/quantum well intermix-ing/non-absorption window

Key words

catastrophic optical damage/primary epitaxial structure/impurity-free vacancy disordering/quantum well intermix-ing/non-absorption window

引用本文复制引用

Tianjiang He,Suping Liu,Wei Li,Li Zhong,Xiaoyu Ma,Cong Xiong,Nan Lin,Zhennuo Wang..Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser[J].半导体学报（英文版）,2023,44(10):65-71,7.

基金项目

This work was supported by the National Natural Sci-ence Foundation of China(NNSFC)(Grant No.62174154). （NNSFC）

半导体学报（英文版）

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1674-4926

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