首页|期刊导航|半导体学报（英文版）|High-performance enhancement-mode GaN-based p-FETs fabricated with O3-Al2O3/HfO2-stacked gate dielectric
半导体学报（英文版）2023，Vol.44Issue(10)：91-95,5.DOI:10.1088/1674-4926/44/10/102801
High-performance enhancement-mode GaN-based p-FETs fabricated with O3-Al2O3/HfO2-stacked gate dielectric
High-performance enhancement-mode GaN-based p-FETs fabricated with O3-Al2O3/HfO2-stacked gate dielectric
摘要
关键词
GaN/p-FETs/enhancement-mode/HfO2/subthreshold swingKey words
GaN/p-FETs/enhancement-mode/HfO2/subthreshold swing引用本文复制引用
Hao Jin,Yaozong Zhong,Qian Sun,Xinyu Liu,Sen Huang,Qimeng Jiang,Yingjie Wang,Jie Fan,Haibo Yin,Xinhua Wang,Ke Wei,Jianxun Liu..High-performance enhancement-mode GaN-based p-FETs fabricated with O3-Al2O3/HfO2-stacked gate dielectric[J].半导体学报（英文版）,2023,44(10):91-95,5.基金项目
This work was supported in part by the National Key Research and Development Program of China under Grant 2022YFB3604400 （）
in part by the Youth Innovation Promotion Association of Chinese Academy Sciences(CAS) （CAS）
in part by CAS-Croucher Funding Scheme under Grant CAS22801 （）
in part by National Natural Science Foundation of China under Grant 62074161,Grant 62004213,and Grant U20A20208 （）
in part by the Beijing Municipal Science and Technology Commis-sion project under Grant Z201100008420009 and Grant Z211100007921018 （）
in part by the University of CAS （）
and in part by IMECAS-HKUST-Joint Laboratory of Microelectronics. （）
