物理学报2023，Vol.72Issue(19)：222-231,10.DOI:10.7498/aps.72.20230797
光电协同调控下HfOx基阻变存储器的阻变特性
Resistive switching characteristics of HfOx-based resistance random access memory under photoelectric synergistic regulation
摘要
关键词
阻变存储器/氧空位/光电协调/多级存储Key words
resistance random access memory/oxygen vacancies/photoelectric modulation/multilevel memory引用本文复制引用
王英,黄慧香,黄香林,郭婷婷..光电协同调控下HfOx基阻变存储器的阻变特性[J].物理学报,2023,72(19):222-231,10.基金项目
国家自然科学基金青年科学基金(批准号:51802025)和陕西省自然科学基础研究计划(批准号:2020JQ-384)资助的课题.Project supported by the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.51802025)and the Natural Science Foundation Research Plan of Shaanxi Province,China(Grant No.2020JQ-384). （批准号:51802025）
