物理学报2023，Vol.72Issue(19)：260-266,7.DOI:10.7498/aps.72.20230553
AlGaN/GaN肖特基二极管阳极后退火界面态修复技术
Interface-state suppression of AlGaN/GaN Schottky barrier diodes with post-anode-annealing treatment
摘要
关键词
AlGaN/GaN/肖特基二极管/低反向漏电/低界面态密度Key words
AlGaN/GaN/Schottky barrier diode/low leakage current/low interface states density引用本文复制引用
武鹏,李若晗,张涛,张进成,郝跃..AlGaN/GaN肖特基二极管阳极后退火界面态修复技术[J].物理学报,2023,72(19):260-266,7.基金项目
国家自然科学基金(批准号:62104185)、国家杰出青年科学基金(批准号:61925404)、中央高校基本科研业务费(批准号:QTZX23076)和青年人才托举工程(批准号:2022QNRC001)资助的课题.Project supported by the National Natural Science Foundation of China(Grant No.62104185),the National Science Fund for Distinguished Young Scholars of China(Grant No.61925404),the Fundamental Research Funds for the Central Universities,China(Grant No.QTZX23076),and the Young Elite Scientists Sponsorship Program by CAST,China(Grant No.2022QNRC001). （批准号:62104185）
