转角双层石墨烯中的势杂质效应OA
Potential Impurity Effect in Twisted Bilayer Graphene
近年来,平带在转角双层石墨烯(TBG)中的发现引起了越来越多的关注.在这项工作中,我们报告了我们对这个平带系统中杂质效应的研究,这对于真实材料来说是一个重要问题.通过采用Lanczos递归方法,我们求解了杂质附近的局域态密度(LDOS).我们发现,对于大尺寸的杂质,一系列束缚态在杂质内部形成,LDOS 中平带所对应的峰在杂质边界附近被压制,而在杂质内部由于杂质势的作用而发生平移.随着杂质尺寸变小,其对平带的影响变弱,这符合其大尺寸Wannier函…查看全部>>
Flat band has attracted more and more interest in recent years,motivated by its discovery in twisted bilayer graphene(TBG).In this work,we report our study of the impurity effect on this flat band system,which is an important issue for real materials.Employing the Lanczos recursive method,we solve the local density of states(LDOS)around a potential impurity.We find for large impurity size,a series of bound states are formed inside the impurity,and the flat b…查看全部>>
刘泽众;王达
南京大学物理学院,固体微结构物理国家重点实验室,南京 210093南京大学物理学院,固体微结构物理国家重点实验室,南京 210093||人工微结构科学与技术协同创新中心,南京大学,南京 210093
物理学
杂质效应转角双层石墨烯局域态密度平带
impurity effecttwisted bilayer graphenelocal density of statesflat band
《物理学进展》 2023 (5)
151-160,10
We thank R.-Y.Mao for his help on plotting fig-ures,and thank Q.-H.Wang,M.Yao,K.Xiang and Y.-Q.Liu for helpful discussions.This work is sup-ported by National Key R&D Program of China(Grant No.2022YFA1403201)and National Natural Science Foundation of China(Grant No.12274205 and No.11874205).
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