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Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short Cavity

Tao Yang Bao-Ping Zhang Yan-Hui Chen Ya-Chao Wang Wei Ou Lei-Ying Ying Yang Mei Ai-Qin Tian Jian-Ping Liu Hao-Chung Guo

纳微快报（英文）2023，Vol.15Issue(12)：115-125,11.

纳微快报（英文）2023，Vol.15Issue(12)：115-125,11.DOI:10.1007/s40820-023-01189-0

Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short Cavity

Tao Yang ¹Bao-Ping Zhang ¹Yan-Hui Chen ¹Ya-Chao Wang ¹Wei Ou ¹Lei-Ying Ying ¹Yang Mei ¹Ai-Qin Tian ²Jian-Ping Liu ²Hao-Chung Guo³

作者信息

1. Laboratory of Micro/Nano-Optoelectronics,School of Electronic Science and Engineering,Xiamen University,Xiamen 361005,Fujian,People's Republic of China
2. Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,Jiangsu,People's Republic of China
3. Department of Photonics,National Yang Ming Chiao Tung University,Hsinchu 30010,Taiwan,People's Republic of China||Semiconductor Research Center,Honhai Research Institute,New Taipei 220236,Taiwan,People's Republic of China
折叠

摘要

关键词

Green vertical cavity surface emitting laser/GaN/Low threshold/InGaN quantum dots

Key words

Green vertical cavity surface emitting laser/GaN/Low threshold/InGaN quantum dots

引用本文复制引用

Tao Yang,Bao-Ping Zhang,Yan-Hui Chen,Ya-Chao Wang,Wei Ou,Lei-Ying Ying,Yang Mei,Ai-Qin Tian,Jian-Ping Liu,Hao-Chung Guo..Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short Cavity[J].纳微快报（英文）,2023,15(12):115-125,11.

基金项目

This work was supported by the National Nat-ural Science Foundation of China(Nos.U21A20493,62104204,and 62234011),the National Key Research and Development Pro-gram of China(No.2017YFE0131500),and the President's Foun-dation of Xiamen University(No.20720220108). （Nos.U21A20493,62104204,and 62234011）

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ISSN：2311-6706

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