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p-Type Two-Dimensional Semiconductors:From Materials Preparation to Electronic Applications

Lei Tang Jingyun Zou

纳微快报(英文)2023,Vol.15Issue(12):242-270,29.
纳微快报(英文)2023,Vol.15Issue(12):242-270,29.DOI:10.1007/s40820-023-01211-5

p-Type Two-Dimensional Semiconductors:From Materials Preparation to Electronic Applications

p-Type Two-Dimensional Semiconductors:From Materials Preparation to Electronic Applications

Lei Tang 1Jingyun Zou2

作者信息

  • 1. Songshan Lake Materials Laboratory,Dongguan 523808,Guangdong,People's Republic of China
  • 2. Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application,School of Physical Science and Technology,Suzhou University of Science and Technology,Suzhou 215009,Jiangsu,People's Republic of China
  • 折叠

摘要

关键词

Two-dimensional materials/p-type semiconductor/Top-down/Bottom-up/Electronics/Optoelectronics

Key words

Two-dimensional materials/p-type semiconductor/Top-down/Bottom-up/Electronics/Optoelectronics

引用本文复制引用

Lei Tang,Jingyun Zou..p-Type Two-Dimensional Semiconductors:From Materials Preparation to Electronic Applications[J].纳微快报(英文),2023,15(12):242-270,29.

基金项目

We acknowledge support from the National Natural Science Foundation of China(Nos.52202044 and 52302190)and Suzhou Science and Technology Program for Industrial Prospect and Key technology(No.SYC2022018).We also acknowledge Prof.Wenjun Chen at Foshan University for the help of Figure 1 and Mr.Junyang Tan at Tsinghua University for the discussion of the outline of this review paper.Open access funding provided by Shanghai Jiao Tong University. (Nos.52202044 and 52302190)

纳微快报(英文)

OACSCDCSTPCDEI

2311-6706

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