人工晶体学报2023，Vol.52Issue(11)：1980-1988,2013,10.
高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯
Growth of High-Quality Centimeter-Size Single-Crystal Graphene on High-Temperature Annealed Cu(111)Substrate
摘要
Abstract
Two-dimensional(2D)graphene has shown great potential of breakthrough of Moore's law limitation due to its atomic thickness in electronic devices.Up to now,chemical vapor deposition(CVD)is a widely applied method for graphene growth due to its low-cost,large-area production,and easy control in layer number.However,the CVD-grown graphene usually suffers from relatively low quality derived from the polycrystalline nature of catalytic metal(e.g.,Cu)substrates.Herein,single-crystal Cu(111)substrates were fabricated by a high-temperature annealing process,initial nucleation of graphene on it has been well controlled,and high-quality and centimeter-size single-crystal graphene was achieved.The Cu(111)substrate provides onefold orientation for the graphene growth according to their lattice matching relation,and domain boundaries of neighboring graphene nuclei could stitch together.The as-grown single-crystal graphene has an average sheet resistance of 607.5 Ω·sq-1.Compared to that of grown on the pristine polycrystalline Cu(1 415.7 Ω·sq-1),it shows high electrical conductivity.High-temperature annealing purified the Cu foils,and induced a clean graphene surface with lower roughness.The quality of graphene is further verified by using it in a field-effect transistor(FET),resulting in a maximum switch ratio of 145.5 and carrier mobility of 2.31 × 103 cm2·V-1·s-1.Based on these results,we believe that the single-crystal graphene in present work is also feasible for fabricating other high-performance electronic devices.关键词
Cu(111)/石墨烯/高温退火/化学气相沉积/场效应晶体管Key words
Cu(111)/graphene/high-temperature annealing/chemical vapor deposition/field-effect transistor分类
数理科学引用本文复制引用
祁建海,黎大兵,陈洋,岳圆圆,吕炳辰,程宇昂,朱凤前,贾玉萍,李绍娟,孙晓娟..高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯[J].人工晶体学报,2023,52(11):1980-1988,2013,10.基金项目
National Key R&D Program of China(2021YFB3601600) （2021YFB3601600）
National Natural Science Foundation of China(61827813,52002368,62121005,62074147,62022081,61974099) （61827813,52002368,62121005,62074147,62022081,61974099）
Natural Science Foundation of Jilin Province(20230101345JC,20230101107JC,20230508132RC) （20230101345JC,20230101107JC,20230508132RC）
Youth Innovation Promotion Association of the Chinese Academy of Sciences(Y201945,2019222) （Y201945,2019222）
