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Study of enhancement-mode GaN pFET with H plasma treated gate recess

Xiaotian Gao Guohao Yu Jiaan Zhou Zheming Wang Yu Li Jijun Zhang Xiaoyan Liang Zhongming Zeng Baoshun Zhang

半导体学报（英文版）2023，Vol.44Issue(11)：70-76,7.

半导体学报（英文版）2023，Vol.44Issue(11)：70-76,7.DOI:10.1088/1674-4926/44/11/112801

Study of enhancement-mode GaN pFET with H plasma treated gate recess

Xiaotian Gao ¹Guohao Yu ²Jiaan Zhou ³Zheming Wang ³Yu Li ³Jijun Zhang ¹Xiaoyan Liang ¹Zhongming Zeng ³Baoshun Zhang²

作者信息

1. School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
2. Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China||School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
3. Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
折叠

摘要

关键词

GaN pFET/E-mode/H plasma treatment/ION/IOFF ratio

Key words

GaN pFET/E-mode/H plasma treatment/ION/IOFF ratio

引用本文复制引用

Xiaotian Gao,Guohao Yu,Jiaan Zhou,Zheming Wang,Yu Li,Jijun Zhang,Xiaoyan Liang,Zhongming Zeng,Baoshun Zhang..Study of enhancement-mode GaN pFET with H plasma treated gate recess[J].半导体学报（英文版）,2023,44(11):70-76,7.

基金项目

This work was supported by the Youth Innovation Promo-tion Association of the Chinese Academy of Sciences(Grant No.2020321)and the National Natural Science Foundation of China(Grant No.92163204). （Grant No.2020321）

半导体学报（英文版）

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ISSN：1674-4926

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