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A review of the etched terminal structure of a 4H-SiC PiN diode

Hang Zhou Xiaoguang Wei Fei Yang Jingrong Yan Jialin Li Huan Ge Tao Zhu Bingke Zhang Shucheng Chang Junmin Sun Xue Bai

半导体学报（英文版）2023，Vol.44Issue(11)：77-87,11.

半导体学报（英文版）2023，Vol.44Issue(11)：77-87,11.DOI:10.1088/1674-4926/44/11/113101

A review of the etched terminal structure of a 4H-SiC PiN diode

Hang Zhou ¹Xiaoguang Wei ¹Fei Yang ¹Jingrong Yan ¹Jialin Li ¹Huan Ge ¹Tao Zhu ¹Bingke Zhang ¹Shucheng Chang ¹Junmin Sun ¹Xue Bai¹

作者信息

1. State Key Laboratory of Advanced Power Transmission Technology, Beijing Institute of Smart Energy, Beijing 102209, China
折叠

摘要

关键词

PiN diode/terminal structure/mesa-JTE/reverse breakdown voltage/etching process

Key words

PiN diode/terminal structure/mesa-JTE/reverse breakdown voltage/etching process

引用本文复制引用

Hang Zhou,Xiaoguang Wei,Fei Yang,Jingrong Yan,Jialin Li,Huan Ge,Tao Zhu,Bingke Zhang,Shucheng Chang,Junmin Sun,Xue Bai..A review of the etched terminal structure of a 4H-SiC PiN diode[J].半导体学报（英文版）,2023,44(11):77-87,11.

基金项目

This work was financially supported by the Scientific and Technology Project of State Grid Corporation of China,Re-search on Dry Etching Forming Technology of Silicon Car-bide Device,Project No.5500-202158437A-0-0-00. （）

半导体学报（英文版）

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ISSN：1674-4926

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