首页|期刊导航|半导体学报（英文版）|Development of a simple two-step lithography fabrication process for resonant tunneling diode using air-bridge technology

Development of a simple two-step lithography fabrication process for resonant tunneling diode using air-bridge technology

Swagata Samanta Jue Wang Edward Wasige

半导体学报（英文版）2023，Vol.44Issue(11)：88-92,5.

半导体学报（英文版）2023，Vol.44Issue(11)：88-92,5.DOI:10.1088/1674-4926/44/11/114101

Development of a simple two-step lithography fabrication process for resonant tunneling diode using air-bridge technology

Swagata Samanta ¹Jue Wang ²Edward Wasige²

作者信息

1. Department of Electronics and Communication Engineering, SRM University-AP, Andhra Pradesh, India||School of Engineering, University of Glasgow, Glasgow G128LT, UK
2. School of Engineering, University of Glasgow, Glasgow G128LT, UK
折叠

摘要

关键词

air-bridge/indium phosphide/microfabrication/resonant tunneling diode

Key words

air-bridge/indium phosphide/microfabrication/resonant tunneling diode

引用本文复制引用

Swagata Samanta,Jue Wang,Edward Wasige..Development of a simple two-step lithography fabrication process for resonant tunneling diode using air-bridge technology[J].半导体学报（英文版）,2023,44(11):88-92,5.

基金项目

The authors would like to acknowledge James Watt Nanofabrication Centre(JWNC)staff,University of Glasgow,UK for the support related to device fabrication.Additionally,the work was funded by Horizon 2020 Future and Emerging Technologies ChipAI project under the grant agreement 828841. （JWNC）

半导体学报（英文版）

OACSCDCSTPCDEI

ISSN：1674-4926

访问量0

下载量0

段落导航