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Study of the influence of virtual guard ring width on the performance of SPAD detectors in 180 nm standard CMOS technology

Danlu Liu Ming Li Tang Xu Jie Dong Yuming Fang Yue Xu

半导体学报（英文版）2023，Vol.44Issue(11)：93-99,7.

半导体学报（英文版）2023，Vol.44Issue(11)：93-99,7.DOI:10.1088/1674-4926/44/11/114102

Study of the influence of virtual guard ring width on the performance of SPAD detectors in 180 nm standard CMOS technology

Danlu Liu ¹Ming Li ¹Tang Xu ¹Jie Dong ¹Yuming Fang ²Yue Xu²

作者信息

1. College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
2. College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China||National and Local Joint Engineering Laboratory of RF Integration & Micro-Assembly Technology, Nanjing 210023, China
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摘要

关键词

single-photon avalanche diode (SPAD)/virtual guard ring/dark count rate (DCR)/photon detection probability (PDP)/afterpulsing probability (AP)

Key words

single-photon avalanche diode (SPAD)/virtual guard ring/dark count rate (DCR)/photon detection probability (PDP)/afterpulsing probability (AP)

引用本文复制引用

Danlu Liu,Ming Li,Tang Xu,Jie Dong,Yuming Fang,Yue Xu..Study of the influence of virtual guard ring width on the performance of SPAD detectors in 180 nm standard CMOS technology[J].半导体学报（英文版）,2023,44(11):93-99,7.

基金项目

This work was supported by the Jiangsu Agricultural Sci-ence and Technology Innovation Fund of China(No.CX(21)3062)and the National Natural Science Foundation of China(No.62171233). （No.CX(21）

半导体学报（英文版）

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ISSN：1674-4926

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