光学精密工程2023，Vol.31Issue(22)：3237-3244,8.DOI:10.37188/OPE.20233122.3237
高功率蓝光半导体激光器巴条的封装技术研究
Research on packaging technology of high power blue semiconductor laser bar
摘要
Abstract
To achieve high-power blue semiconductor laser outputs,the packaging technology of blue light bars was studied herein.First,high-power gallium nitride(GaN)blue semiconductor laser bars were encapsulated using gold-tin hard solder.A copper-tungsten transition heat sink was used as a buffer layer to suppress the residual stress between the copper heat sink and GaN laser chips.The chips were eutectic bonded onto the copper-tungsten transition heat sink using a high-precision SMT machine.Because the quality of the SMD directly affects the output characteristics of the device,the focus was on analyzing the impact of the bonding temperature and pressure of the SMD machine on the device.The experimental re-sults reveal that,when the bonding temperature of the mounter is 320 ℃,bonding pressure is 0.5 N,and bonding time is 40 s,the solder layer interface cavity is the smallest,thermal resistance is the lowest(0.565 ℃/W),and threshold current is also the lowest(4.9 A).When the injection current is 30 A,the maximum output optical power is 32.21 W,and the maximum solar-cell efficiency reaches 23.3%.There-fore,after optimizing the bonding temperature,bonding pressure,and bonding time,the technical solution of using gold-tin hard solder to eutectic bond blue semiconductor laser chips onto copper-tungsten transition heat sinks is an effective way to achieve high-power operation of blue semiconductor laser bars.关键词
高功率激光器/半导体激光器/氮化镓/蓝光/巴条/铜钨过渡热沉Key words
high-power laser/semiconductor laser/gallium nitride/blue light/Ba Tiao/copper tung-sten transition heat sink分类
电子信息工程引用本文复制引用
周勇,王琦,高翔,高俊腱,陶春燕,郝明明..高功率蓝光半导体激光器巴条的封装技术研究[J].光学精密工程,2023,31(22):3237-3244,8.基金项目
广东省自然科学基金资助项目(No.2019B1515120091) （No.2019B1515120091）
广东省重点领域研发计划资助项目(No.2020B090922001) （No.2020B090922001）
