北京交通大学学报2023，Vol.47Issue(5)：126-135,10.DOI:10.11860/j.issn.1673-0291.20230050
SiC MOSFET有源驱动电路关断轨迹优化方法
Optimization method for turn-off trajectory of SiC MOSFET active driving circuit
摘要
Abstract
The rapid switching process of SiC MOSFET introduces switching oscillations and Electro-magnetic Interference(EMI)concerns.To address these issues,multi-level active driving circuits offer the capability to optimize the turn-off trajectory of SiC MOSFET by adjusting the driving voltage dur-ing the switching process.In the context of active driving circuit,this work presents a method for opti-mizing the selection of intermediate levels and action timing,specifically focusing on the turn-off tra-jectory of SiC MOSFET.This method relies on an understanding of the turn-off mechanism and an equivalent current slope approach to create a prediction model for SiC MOSFET turn-off trajectory.It further leverages an objective-based optimization approach to determine the ideal action timing and lev-els for intermediate stages in the active driving circuit.The objective is to ensure that SiC MOSFET operates at an optimized compromise point,balancing turn-off voltage peak and turn-off loss.The re-search results indicate that the combination of the SiC MOSFET turn-off trajectory prediction model and the proposed optimization method effectively predicts and enhances the turn-off trajectory of SiC MOSFET.Notably,the model exhibits a maximum error of less than 10%,validating its accuracy and applicability under various gate resistances.关键词
SiC MOSFET/开关特性/有源驱动/轨迹预测模型Key words
SiC MOSFET/switching characteristics/active driving/trajectory prediction model分类
信息技术与安全科学引用本文复制引用
陈月清,郭希铮,部旭聪,郝瑞祥,游小杰..SiC MOSFET有源驱动电路关断轨迹优化方法[J].北京交通大学学报,2023,47(5):126-135,10.基金项目
中央高校基本科研业务费专项资金(2022JBXT006) （2022JBXT006）
国家重点研发计划(2022YFB2404105) Fundamental Research Funds for the Central Universities(2022JBXT006) （2022YFB2404105）
National Key R&D Plan(2022YFB2404105) （2022YFB2404105）
