发光学报2023，Vol.44Issue(12)：2231-2241,11.DOI:10.37188/CJL.20230216
1 μm波段高功率超辐射发光二极管
1 μm High Power Superluminescent Diodes
摘要
Abstract
In order to improve the output characteristics of 1 μm-band superluminescent diodes,this article stud-ies the epitaxial structure and J-type waveguide structure.Based on the research results,the parameters of the epitax-ial structure and waveguide structure are determined,and the electrode window preparation process and single-layer hafnium oxide film formation conditions are optimized.The research has shown that reducing the difference in Al composition between the waveguide and the limiting layer AlGaAs material is beneficial for improving the beam char-acteristics of the device.In addition,increasing the etching depth,ridge width,and curvature radius will reduce the loss coefficient and improve the output power of the device.Based on simulation results,a three quantum well struc-ture device with non-uniform well width and large well depth was prepared.A single-layer hafnium oxide film with a reflectivity of about 0.5%was deposited on the front cavity surface,and a high reflection film was evaporated on the back cavity surface.The cavity length was about 2 mm,and the waveguide curvature radius was 21.8 mm.Under 500 mA continuous current injection,an output power of 118.1 mW and a spectral half width of 32.5 nm were achieved.The horizontal and vertical far-field divergence angles of the device are 13.2° and 21.1°,respectively.In addition,the design of a single-layer anti-reflective film effectively suppresses the lasing of devices with high gain,simplifies process complexity,and avoids stress issues between different materials of the multi-layer anti-reflective film.关键词
超辐射发光二极管/弯曲波导/曲率半径/损耗系数/输出特性Key words
superluminescent diodes/curved waveguide/curvature radius/loss coefficient/output characteristic分类
信息技术与安全科学引用本文复制引用
伏丁阳,高欣,赵仁泽,张悦,苏鹏,薄报学..1 μm波段高功率超辐射发光二极管[J].发光学报,2023,44(12):2231-2241,11.基金项目
国家自然科学基金(61774024) （61774024）
吉林省科技发展计划(20190302007GX,20200501008GS)Supported by National Natural Science Foundation of China(61774024) （20190302007GX,20200501008GS）
Science and Technology Development Plan of Jilin Province(20190302007GX,20200501008GS) （20190302007GX,20200501008GS）
