发光学报2023，Vol.44Issue(12)：2242-2249,8.DOI:10.37188/CJL.20230234
交流驱动无电学接触GaN基Micro-LED器件光电特性
Photoelectric Characteristics of AC-driven Non-electrical Contact GaN-based Micro-LED Device
摘要
Abstract
The miniaturization of Micro-LED devices presents a series of challenges,including size effects,high-speed mass transfer,and high-density bonding between light-emitting devices and driving backplanes.In this paper,an alternating current(AC)-driven non-electric contact(NEC)GaN-based Micro-LED device was prepared by metal organic chemical vapor deposition(MOCVD)and atomic layer deposition(ALD)and its photoelectric characteristics were also investigated.The results indicate that the circuit model of NEC Micro-LED devices can be represented by an equivalent RC circuit.The equivalent impedance initially decreases rapidly and then stabilizes with increasing AC-driven signal frequency.When the signal frequency keeps constant,the current-voltage(Ⅰ-Ⅴ)curves exhibit lin-ear relationships and the equivalent impedance remains stable.The luminance increases continuously with increas-ing working voltage.When the driving voltage remains constant,the luminance of the device initially rises and then falls with the gradual increase in frequency,reaching a maximum luminance in the frequency range of 16-22 MHz.Additionally,the luminescence of the device is delayed and there is a current leading effect due to the capacitive property of the circuit.Compared with the traditional Micro-LED devices,the NEC Micro-LED devices have non-electrical contact with external electrodes and the luminescence of devices is attributed to inherent charge carriers un-der AC driving conditions.This development offers a promising solution to the technical challenges from the miniatur-ization of Micro-LED devices.关键词
Micro-LED器件/氮化镓/无电学接触/交流驱动/光电特性Key words
Micro-LED device/GaN/non-electrical contact/alternating-current drive/photoelectric characteristics分类
信息技术与安全科学引用本文复制引用
郭韫韵,翁书臣,邹振游,许海龙,王浩楠,周雄图,吴朝兴,张永爱..交流驱动无电学接触GaN基Micro-LED器件光电特性[J].发光学报,2023,44(12):2242-2249,8.基金项目
国家重点研发计划(2021YFB3600402) （2021YFB3600402）
闽都创新实验室自主部署项目(2021ZZ111,2021ZZ130)Supported by National Key R&D Program of China(2021YFB3600402) （2021ZZ111,2021ZZ130）
Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China(2021ZZ111,2021ZZ130) （2021ZZ111,2021ZZ130）
