人工晶体学报2023，Vol.52Issue(12)：2156-2160,5.
Gd3(Al,Ga)5O12∶Ce晶体生长与闪烁性能研究
Growth and Scintillation Properties of Gd3(Al,Ga)5 O12∶Ce Crystal
摘要
Abstract
Ce3+ doped gadolinium aluminum gallium garnet(GAGG∶Ce)scintillation crystal has the advantages of high light output,high energy resolution,short decay time,no self radiation and non-deliquescence,which make it has a broad application prospect in nuclear medical imaging,security inspection and environment detection et al.This paper reported the Czochralski growth and scintillation properties of GAGG∶Ce single crystal.GAGG∶Ce raw material was synthesized by high temperature solid state reaction method.By means of XRD analysis,the raw material sintered at 1 500℃for 12 h is verified to be pure GAGG phase.GAGG∶Ce crystal with size ofϕ50 mm×90 mm was successfully grown by Czochralski method.The transmission spectrum,X-ray excited emission spectrum and pulse height spectrum of the crystal were tested.Results show that optical transmittance at 550 nm for the sample with thickness of 7 mm reaches as high as 81.5%.The X-ray excited emission peak central wavelength of the GAGG∶Ce crystal is located at 550 nm.The light output of the GAGG∶Ce crystal is 59 000 photons/MeV and the energy resolution is 6.2%@662 keV.The decay time is 149 ns and a slow component of 748 ns.关键词
GAGG∶Ce/闪烁晶体/高温固相反应法/提拉法/闪烁性能Key words
GAGG∶Ce/scintillation crystal/high temperature solid state reaction method/Czochralski method/scintillation property分类
数理科学引用本文复制引用
王海丽,李辉,周南浩,石爽爽,苏健,张微,陈建荣,黄存新..Gd3(Al,Ga)5O12∶Ce晶体生长与闪烁性能研究[J].人工晶体学报,2023,52(12):2156-2160,5.基金项目
国家重点研发计划(2017YFB0310500) （2017YFB0310500）
