人工晶体学报2023，Vol.52Issue(12)：2196-2202,7.
物理气相传输法合成AlN单晶性能表征
Characterization of AlN Single Crystal Synthesized by the Physical Vapor Transport Method
摘要
Abstract
The 14 mm×12 mm AlN single crystal is synthesized by the homoepitaxial physical vapor transport method.The crystal sample sliced from the boule is processed by lapping and chemical mechanical processes(CMP).The sample is characterized by Raman spectrometer,high resolution X-ray diffractometer,X-ray photoelectron spectrometer and photoluminescence spectrometer.The Raman results show that the full width at half maximum(FWHM)of the E2(high)phonon mode of Raman spectrum is3.3 cm-1 in the central region of the sample,and the FWHM of the E2(high)phonon mode of Raman spectrum is 4.3 cm-1 in the edge of the sample,the AlN single crystal exhibits high crystal quality.The FWHM of the X-ray rocking curve increase to 100″in the central region of the homoepitaxial growth crystal,while the FWHM of the X-ray rocking curve is 205″in the edge region of the homoepitaxial growth crystal,which indicates defects exist in the crystal.XPS results show that there are C,O,Si impurity elements in the crystal,and the atomic concentration of the impurities is 0.74%,1.43%and 2.14%,respectively.It is found that the mainly oxygen impurities exist in the crystal in the form of Al—O,N—Al—O bonding.PL spectra show that crystal contains VAl-ON compound defect and VAl point defect.关键词
氮化铝/物理气相传输法/半峰全宽/杂质/缺陷Key words
AlN/physical vapor transport method/FWHM/impurity/defect分类
数理科学引用本文复制引用
周振翔,陈宁,李丹,石爽爽,倪代秦,陈建荣,黄存新,李荣臻,魏华阳..物理气相传输法合成AlN单晶性能表征[J].人工晶体学报,2023,52(12):2196-2202,7.基金项目
国家重点研发计划(2022YFB3605300) （2022YFB3605300）
