云南化工2023，Vol.50Issue(12)：16-20,5.DOI:10.3969/j.issn.1004-275X.2023.12.04
GaAs和InP化合物半导体的发展趋势及应用
Development Trends and Applications of GaAs and InP Compound Semiconductors
韩家贤 1韦华 1刘建良 1叶晓达 1赵兴凯 1牛应硕 1孙清 1李芳艳 1王茺2
作者信息
- 1. 云南鑫耀半导体材料有限公司, 云南 昆明 650503
- 2. 云南大学 材料与能源学院, 云南 昆明 650500
- 折叠
摘要
Abstract
The second generation semiconductor materials gallium arsenide and indium phosphide are widely used in 5G communication,data centers,next-generation display devices,unmanned driving,wearable devices,aerospace,and other fields.Their applications in the optoe-lectronic field are becoming increasingly mature,and the layout of domestic upstream,midstream,and downstream industries is becoming more perfect.The downstream market size will grow rapidly.This article discusses the development trends and routes of GaAs and InP compound semiconductors.关键词
磷化铟/砷化镓/半导体光电器件Key words
indium phosphide/gallium arsenide/semiconductor optoelectronic devices分类
信息技术与安全科学引用本文复制引用
韩家贤,韦华,刘建良,叶晓达,赵兴凯,牛应硕,孙清,李芳艳,王茺..GaAs和InP化合物半导体的发展趋势及应用[J].云南化工,2023,50(12):16-20,5.
