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Low working loss Si/4H-SiC heterojunction MOSFET with analysis of the gate-controlled tunneling effect

Hang Chen You-Run Zhang

电子科技学刊2023，Vol.21Issue(4)：35-47,13.

电子科技学刊2023，Vol.21Issue(4)：35-47,13.DOI:10.1016/j.jnlest.2023.100224

Low working loss Si/4H-SiC heterojunction MOSFET with analysis of the gate-controlled tunneling effect

Hang Chen ¹You-Run Zhang¹

作者信息

1. State Key Laboratory of Electronic Thin Films and Integrated Devices,School of Integrated Circuit Science and Engineering,University of Electronic Science and Technology of China,Chengdu,610054,China
折叠

摘要

关键词

Heterojunction/On-state resistance/Silicon carbide(4H-SiC)trench metal-oxide-semiconductor field effect transistors(MOSFETs)/Switching loss

Key words

Heterojunction/On-state resistance/Silicon carbide(4H-SiC)trench metal-oxide-semiconductor field effect transistors(MOSFETs)/Switching loss

引用本文复制引用

Hang Chen,You-Run Zhang..Low working loss Si/4H-SiC heterojunction MOSFET with analysis of the gate-controlled tunneling effect[J].电子科技学刊,2023,21(4):35-47,13.

基金项目

This work was supported by the Major Science and Technology Program of Anhui Province under Grant No.2020b05050007. （）

电子科技学刊

OACSCD

ISSN：1674-862X

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