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氮化镓基Micro-LED侧壁对外量子效率的影响及侧壁处理技术综述

邝海 黄振 熊志华 刘丽

中国光学(中英文)2023,Vol.16Issue(6):1305-1317,13.
中国光学(中英文)2023,Vol.16Issue(6):1305-1317,13.DOI:10.37188/CO.2023-0091

氮化镓基Micro-LED侧壁对外量子效率的影响及侧壁处理技术综述

A review of the effect of GaN-Based Micro-LED sidewall on external quantum efficiency and sidewall treatment techniques

邝海 1黄振 1熊志华 1刘丽1

作者信息

  • 1. 江西科技师范大学江西省光电子与通信重点实验室,江西南昌 330038
  • 折叠

摘要

Abstract

Micro-LEDs offers the benefits of high brightness,high response frequency,and low power con-sumption,making them an attractive candidate for future display technologies and Visible Light Communica-tion(VLC)systems.Nonetheless,their low External Quantum Efficiency(EQE)currently impedes their scaled mass production and further applications.In order to break through the bottleneck of low EQE,we conducted an analysis of Micro-LED external quantum efficiency's contributing factors.The influencing factors for EQE are analyzed.It is concluded that the carrier loss and non-radiative recombination caused by sidewall defects are the main reasons for the decrease in EQE.In addition,we summarized the impact of sidewall defects on carrier transport and composites,and we also reviewed the commonly used sidewall treat-ment technology and repair methods,and pointed out that the existing sidewall treatment methods are helpful but insufficient for improving EQE,and the mechanism of carrier interaction with sidewall defects is not very clear.It is suggested to carry out a thorough and systematic study on the types and distribution of sidewall de-fects,the mechanism of carrier and sidewall defects,and the defect repair mode in the sidewall treatment pro-cess.Finally,future development trends are projected.This paper offers design ideas and theoretical founda-tions to enhance the external quantum efficiency and accelerate the process of commercialization and mass production of Micro-LEDs.

关键词

侧壁缺陷/微发光二极管/外量子效率/载流子/侧壁钝化

Key words

defects on sidewall/micro-LED/external quantum efficiency/carriers/surface passivation

分类

电子信息工程

引用本文复制引用

邝海,黄振,熊志华,刘丽..氮化镓基Micro-LED侧壁对外量子效率的影响及侧壁处理技术综述[J].中国光学(中英文),2023,16(6):1305-1317,13.

基金项目

江西省教育厅科学技术研究项目(No.GJJ2201338) (No.GJJ2201338)

国家自然科学基金(No.12364013) (No.12364013)

江西科技师范大学博士科研启动基金项目(No.2019BSQD020) (No.2019BSQD020)

中央引导地方科技发展资金项目(No.2022ZDD03088)Supported by Science and Technology Research Project of Jiangxi Education Department(No.GJJ2201338) (No.2022ZDD03088)

National Natural Science Foundation of China(No.12364013) (No.12364013)

Doctoral Research Foundation of Jiangxi Sci-ence and Technology Normal University(No.2019BSQD020) (No.2019BSQD020)

Government Guides Local Science and Techno-logy Development Funds(No.2022ZDD03088) (No.2022ZDD03088)

中国光学(中英文)

OACSTPCD

2095-1531

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