中国光学（中英文）2023，Vol.16Issue(6)：1512-1523,12.DOI:10.37188/CO.2022-0257
多变量Si杂质诱导InGaAs/AlGaAs量子阱混杂研究
InGaAs/AlGaAs quantum well intermixing induced by Si impurities under multi-variable conditions
摘要
Abstract
Catastrophic Optical Mirror Damage(COMD)on the cavity surface is the key factor limiting the threshold output power of high-power quantum well semiconductor laser diodes.To improve the output power of the laser diode,the band gap width of the active material in the cavity surface of the semiconductor laser diode can be adjusted by the quantum well intermixing technology to form a non-absorbing window transparent to the output laser.Based on the primary epitaxial wafers of InGaAs/AlGaAs high power quantum well semiconductor laser diode,using the single crystal Si dielectric layer grown by Metal Oxide Chemical Vapor Deposition(MOCVD)as the diffusion source,the research on Si impurity induced quantum well intermixing was carried out by using the Rapid Thermal Annealing(RTA)process.The effects of growth characteristics of Si dielectric layer,the temperature and time of RTA on the intermixing process were investigated.The experimental results show that the epitaxial 50 nm Si dielectric layer at 650 ℃ com-bined with 875 ℃/90 s RTA treatment can obtain about 57 nm wavelength blue shift while maintaining the photoluminescence spectrum shape and the primary epitaxial wafers.It is found that the diffusion of Si im-purities into the waveguide layer on the primary epitaxial wafer is the key to the remarkable effect of quantum well intermixing by the energy spectrum measurement technique.关键词
半导体激光器/量子阱混杂/快速热退火/波长蓝移/光致发光谱Key words
semiconductor lasers/quantum well intermixing/rapid thermal annealing/blue shift/photolu-minescence spectra分类
信息技术与安全科学引用本文复制引用
刘翠翠,林楠,马骁宇,张月明,刘素平..多变量Si杂质诱导InGaAs/AlGaAs量子阱混杂研究[J].中国光学（中英文）,2023,16(6):1512-1523,12.基金项目
广东省重点领域研发计划项目(No.2020B090922003) （No.2020B090922003）
中核集团"青年英才"科研项目(No.11FY212306000801)Supported by Key Areas Research and Development Program of Guangdong Province of China(No.2020B090922003) （No.11FY212306000801）
Young Talents Project of China National Nuclear Corporation(No.11FY212306000801) （No.11FY212306000801）
