真空电子技术Issue(6)：50-56,7.DOI:10.16540/j.cnki.cn11-2485/tn.2023.06.09
ZrO2/InP和ZrO2/InAs堆栈的元素扩散研究
Study of Element Diffusion in ZrO2/InP and ZrO2/InAs Stacks
摘要
Abstract
Ⅲ-Ⅴ compound semiconductors are expected to replace silicon as the channel material for FETs at sub-5 nm nodes,and the quality of their interface with high-k gate dielectrics is extremely critical to device performance.The surfaces of InAs and InP substrates are pretreated with H218O vapor and then ZrO2 films are deposited in situ on the substrates using atomic layer deposition.The diffusion behaviors of atoms from substrates and oxygen atoms at the interface before and after annealing are systematically in-vestigated.The interface physics and chemistry are characterized by angle-resolved X-ray photoelectron spectroscopy(ARXPS)and time-of-flight secondary ion mass spectrometry(TOF-SIMS)techniques,and the physical mechanisms are discussed.The work will deepen the materials science understanding of theⅢ-Ⅴ/high-k gate dielectric interfaces.关键词
18O同位素示踪法/InP/ZrO2/角分辨X射线光电子能谱/飞行时间二次离子质谱/退火Key words
18O isotope tracer method/InP/ZrO2/ARXPS/TOF-SIMS/Annealing分类
信息技术与安全科学引用本文复制引用
刘澳,罗锋,孔亚萍,李治云,黄荣,董红,冯泽,井美艺,郑旭,单一洋,刘晖,王维华,卢峰,程雅慧..ZrO2/InP和ZrO2/InAs堆栈的元素扩散研究[J].真空电子技术,2023,(6):50-56,7.基金项目
国家重点研发计划项目(2018YFB2200500,2018YFB2200504) （2018YFB2200500,2018YFB2200504）
国家自然科学基金项目(22090010,22090011) （22090010,22090011）
