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A review on GaN HEMTs: nonlinear mechanisms and improvement methods

Chenglin Du Ran Ye Xiaolong Cai Xiangyang Duan Haijun Liu Yu Zhang Gang Qiu Minhan Mi

半导体学报（英文版）2023，Vol.44Issue(12)：34-50,17.

半导体学报（英文版）2023，Vol.44Issue(12)：34-50,17.DOI:10.1088/1674-4926/44/12/121801

A review on GaN HEMTs: nonlinear mechanisms and improvement methods

Chenglin Du ¹Ran Ye ¹Xiaolong Cai ¹Xiangyang Duan ¹Haijun Liu ²Yu Zhang ²Gang Qiu ²Minhan Mi³

作者信息

1. State Key Laboratory of Mobile Network and Mobile Multimedia Technology, Shenzhen 518055, China||Wireless Product Planning Department, ZTE Corporation, Shenzhen 518055, China
2. Wireless Product Planning Department, ZTE Corporation, Shenzhen 518055, China
3. School of Microelectronics, Xidian University, Xi'an 710071, China
折叠

摘要

关键词

GaN HEMT/linearity improvement/transconductance reduction/transconductance compensation/nanowire channel/graded channel

Key words

GaN HEMT/linearity improvement/transconductance reduction/transconductance compensation/nanowire channel/graded channel

引用本文复制引用

Chenglin Du,Ran Ye,Xiaolong Cai,Xiangyang Duan,Haijun Liu,Yu Zhang,Gang Qiu,Minhan Mi..A review on GaN HEMTs: nonlinear mechanisms and improvement methods[J].半导体学报（英文版）,2023,44(12):34-50,17.

基金项目

This work was supported by the Shenzhen Science and Technology Program on Key Basic Research Project under grant JCYJ20210324120409025 and the National Natural Sci-ence Foundation of China under grant 61904135. （）

半导体学报（英文版）

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ISSN：1674-4926

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