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High-temperature annealing of ((2)01) β-Ga2O3 substrates for reducing structural defects after diamond sawing

Pavel Butenko Michael Boiko Mikhail Sharkov Aleksei Almaev Aleksnder Kitsay Vladimir Krymov Anton Zarichny Vladimir Nikolaev

半导体学报（英文版）2023，Vol.44Issue(12)：136-144,9.

半导体学报（英文版）2023，Vol.44Issue(12)：136-144,9.DOI:10.1088/1674-4926/44/12/122801

High-temperature annealing of ((2)01) β-Ga2O3 substrates for reducing structural defects after diamond sawing

Pavel Butenko ¹Michael Boiko ²Mikhail Sharkov ²Aleksei Almaev ³Aleksnder Kitsay ²Vladimir Krymov ²Anton Zarichny ³Vladimir Nikolaev⁴

作者信息

1. MISiS University, Moscow 119049, Russia
2. Perfect Crystala LLC, St. Petersburg 194223, Russia
3. Tomsk State University, Tomsk 634050, Russia
4. MISiS University, Moscow 119049, Russia||Perfect Crystala LLC, St. Petersburg 194223, Russia
折叠

摘要

关键词

gallium oxide/epi-ready substrate/etch pits/crystal defect/mosaic structure/crystal perfection

Key words

gallium oxide/epi-ready substrate/etch pits/crystal defect/mosaic structure/crystal perfection

分类

数理科学

引用本文复制引用

Pavel Butenko,Michael Boiko,Mikhail Sharkov,Aleksei Almaev,Aleksnder Kitsay,Vladimir Krymov,Anton Zarichny,Vladimir Nikolaev..High-temperature annealing of ((2)01) β-Ga2O3 substrates for reducing structural defects after diamond sawing[J].半导体学报（英文版）,2023,44(12):136-144,9.

基金项目

This research was funded by the Russian Science Founda-tion,project#23-29-10196. （）

半导体学报（英文版）

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ISSN：1674-4926

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