|国家科技期刊平台
| 注册
首页|期刊导航|半导体学报（英文版）|Multiple SiGe/Si layers epitaxy and SiGe selective etching for vertically stacked DRAM

Multiple SiGe/Si layers epitaxy and SiGe selective etching for vertically stacked DRAM

Zhenzhen Kong Yuhui Ren Chen Li Jiahan Yu Jinbiao Liu Jingxiong Liu Qinzhu Zhang Jianfeng Gao Huihui Li Xiangsheng Wang Junfeng Li Hongxiao Lin Henry H. Radamson Chao Zhao Tianchun Ye Guilei Wang Hailing Wang Yanpeng Song Junjie Li Xiaomeng Liu Anyan Du Yuanhao Miao Yiwen Zhang

半导体学报（英文版）2023，Vol.44Issue(12)：145-153,9.
✕
半导体学报（英文版）2023，Vol.44Issue(12)：145-153,9.DOI:10.1088/1674-4926/44/12/124101

Multiple SiGe/Si layers epitaxy and SiGe selective etching for vertically stacked DRAM

Multiple SiGe/Si layers epitaxy and SiGe selective etching for vertically stacked DRAM

Zhenzhen Kong 1Yuhui Ren 1Chen Li 1Jiahan Yu 1Jinbiao Liu 1Jingxiong Liu 1Qinzhu Zhang 2Jianfeng Gao 2Huihui Li 3Xiangsheng Wang 3Junfeng Li 2Hongxiao Lin 4Henry H. Radamson 5Chao Zhao 3Tianchun Ye 1Guilei Wang 6Hailing Wang 3Yanpeng Song 3Junjie Li 2Xiaomeng Liu 3Anyan Du 2Yuanhao Miao 7Yiwen Zhang1

作者信息

  • 1. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China||Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 100049, China
  • 2. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 3. Beijing Superstring Academy of Memory Technology, Beijing 100176, China
  • 4. Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System,Guangzhou 510535, China||Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 100049, China
  • 5. Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System,Guangzhou 510535, China
  • 6. Beijing Superstring Academy of Memory Technology, Beijing 100176, China||Hefei National Laboratory, Hefei 230088, China
  • 7. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China||Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System,Guangzhou 510535, China
  • 折叠

摘要

关键词

RPCVD/epitaxy/SiGe/Si multilayers/L-GAAFETs/VS-DRAM

Key words

RPCVD/epitaxy/SiGe/Si multilayers/L-GAAFETs/VS-DRAM

引用本文复制引用

Zhenzhen Kong,Yuhui Ren,Chen Li,Jiahan Yu,Jinbiao Liu,Jingxiong Liu,Qinzhu Zhang,Jianfeng Gao,Huihui Li,Xiangsheng Wang,Junfeng Li,Hongxiao Lin,Henry H. Radamson,Chao Zhao,Tianchun Ye,Guilei Wang,Hailing Wang,Yanpeng Song,Junjie Li,Xiaomeng Liu,Anyan Du,Yuanhao Miao,Yiwen Zhang..Multiple SiGe/Si layers epitaxy and SiGe selective etching for vertically stacked DRAM[J].半导体学报（英文版）,2023,44(12):145-153,9.

基金项目

This work is supported in part by the Strategic Priority Research Program of the Chinese Academy of Sciences(Project ID.XDA0330300),in part by Innovation Program for Quantum Science and Technology(Project ID.2021ZD0302301),and in part by the Youth Innovation Promo-tion Association of CAS(Project ID.2020037).And Beijing Superstring Academy of Memory Technology has given strong technical and testing support. （Project ID.XDA0330300）

半导体学报（英文版）

OACSCDCSTPCDEI

1674-4926

访问量4
|
下载量0
段落导航相关论文