航天器环境工程2023，Vol.40Issue(6)：622-629,8.DOI:10.12126/see.2023026
SRAM单元的单粒子效应三维敏感区形状参数模拟仿真方法
A method for simulating three-dimensional sensitive volume parameters in representation of single event effect of SRAM unit
摘要
Abstract
In order to reveal the variation laws of radiation effect and internal charge collection in static random access memory(SRAM)so as to provide effective simulation data support for the device radiation hardening,a simulation method was proposed for determining three-dimensional sensitive volume parameters according to the on-orbit single event upset(SEU)of SRAM unit.Firstly,by combining simulations of device-level and circuit-level,the three-dimensional model was constructed using technology computer aided design(TCAD).The single event transient current was obtained by simulating heavy ion incidence from different directions,and then the current was input into the circuit-level model of the 65 nm SRAM unit as a fault to simulate SEU.Finally,the SEE-induced three-dimensional sensitive volume parameters of the 65 nm SRAM unit were obtained.关键词
静态随机存储器/单粒子效应/器件级仿真/电路级仿真/三维敏感区Key words
SRAM/single event effect/device-level simulation/circuit-level simulation/three-dimensional sensitive region分类
信息技术与安全科学引用本文复制引用
王玉才,刘艳,曹荣幸,李红霞,刘洋,郑澍,韩丹,薛玉雄..SRAM单元的单粒子效应三维敏感区形状参数模拟仿真方法[J].航天器环境工程,2023,40(6):622-629,8.基金项目
国家自然科学基金项目(编号:12004329) （编号:12004329）
强脉冲辐射环境模拟与效应国家重点实验室专项(编号:SKLIPR2115) （编号:SKLIPR2115）
江苏省研究生实践创新计划项目(编号:SJCX22_1704) （编号:SJCX22_1704）
扬州宽禁带半导体电子材料与器件实验室开放基金项目(编号:YZ202026301,YZ202026306) （编号:YZ202026301,YZ202026306）
