空间电子技术2023，Vol.20Issue(6)：64-74,11.DOI:10.3969/j.issn.1674-7135.2023.06.009
GaAs PHEMT的Ⅰ-Ⅴ特性退化机理综述
A review of the Ⅰ-Ⅴ characteristics degradation mechanism of GaAs PHEMT
何述万 1董濛 2周虎 2梁晓新 1周智勇 1阎跃鹏 1王魁松1
作者信息
- 1. 中国科学院微电子研究所,北京 100029||新一代通信射频芯片技术北京市重点实验室,北京 100029
- 2. 国家发展和改革委员会创新驱动发展中心(数字经济研究发展中心),北京 100045
- 折叠
摘要
Abstract
In the context of a new round of information technology development,the application of GaAs pseudomorphic high electron mobility transistors in RF communication deserves attention.The article summarizes the main degradation mechanisms of their Ⅰ-Ⅴ characteristics and proposes the direction and measures for performance optimization.The article analyzes the layer structure and function of transistors,derives the Ⅰ-Ⅴ characteristic equation of transistors,establishes the mapping relationship between device physical level parameters and circuit level parameters,and seeks the degradation law of performance parameters such as threshold voltage,leakage source current,and transconductance.In order to provide a clear description of the performance degradation process,the article divides the main degradation failure mechanisms into three aspects:structural defects,thermal stress,and environmental factors.In order to alleviate the degree of degradation and failure of transistors,this article explores the space for performance improvement and optimization approaches from the aspects of structural materials,processing technology,and circuit design.关键词
砷化镓/Ⅰ-Ⅴ特性/层结构/退化失效机理/工艺改进Key words
GaAs/Ⅰ-Ⅴ characteristics/layer structure/degradation failure mechanism/process improvement分类
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何述万,董濛,周虎,梁晓新,周智勇,阎跃鹏,王魁松..GaAs PHEMT的Ⅰ-Ⅴ特性退化机理综述[J].空间电子技术,2023,20(6):64-74,11.
