电化学金属化阻性存储器导电细丝生长中的离子动力学研究OACSCDCSTPCD
Kinetics study of ions in conductive filament growth process of electrochemical metallization resistive memory
以Arrhenius定律和电化学金属化器件中离子运动的超势理论作为离子运动的基础,本文建立了修正的Mott-Gurney微分方程组.虽然Mott-Gurney方程没有解析解,但采用该方程可求出离子的平均位移.再通过基于Cell的几何模型,求出平均位移与导电细丝生长长度的关系.得到电压与Forming/Set时间方程和导电细丝生长方程.本文提出了一个提取离子的动力学参数的算法,采用该算法计算了 Ag/γ-AgI/Pt,Ag/TiO2/Pt,Ag/G…查看全部>>
In this work,a system of modified Mott-Gurney differential equations is based on Arrhenius'law and the overpotential theory of ionic motion in bipolar electrochemical metallization(ECM)resistive devices.The average displacement of ions is solved by the modified Mott-Gurney equation.Then,the relation between the average displacement and the growth length of the conductive filament is obtained by a geometric model based on cells.The equation of applied voltage…查看全部>>
柯庆;代月花
安徽大学集成电路学院,合肥 230601安徽大学集成电路学院,合肥 230601
阻性存储器Forming/Set时间导电细丝跃迁步长和势垒
bipolar resistive memoryForming/Set timeconductive filamentjump step and potential barrier
《物理学报》 2023 (24)
基于非线性选通器的相变存储研究
214-225,12
国家自然科学基金(批准号:61874001,62004001,62274002)资助的课题.Project supported by the National Natural Science Foundation of China(Grant Nos.61874001,62004001,62274002).
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