Effects of Strain Channel on Electron Irradiation Tolerance of InP-based HEMT StructuresOACSCDCSTPCD

作者：FANG Renfeng;CAO Wenyu;WEI Yanfeng;WANG Yin;CHEN Chuanliang;YAN Jiasheng;XING Yan;LIANG Guijie;ZHOU Shuxing

作者单位：Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices,Hubei University of Arts and Science,Xiangyang 441053,ChinaHubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices,Hubei University of Arts and Science,Xiangyang 441053,ChinaHubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices,Hubei University of Arts and Science,Xiangyang 441053,ChinaHubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices,Hubei University of Arts and Science,Xiangyang 441053,ChinaHubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices,Hubei University of Arts and Science,Xiangyang 441053,ChinaHubei Key Laboratory of High Power Semiconductor Technology,Hubei TECH Semiconductor Co.,Ltd,Xiangyang 441021,ChinaHubei Key Laboratory of High Power Semiconductor Technology,Hubei TECH Semiconductor Co.,Ltd,Xiangyang 441021,ChinaHubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices,Hubei University of Arts and Science,Xiangyang 441053,China||Hubei Longzhong Laboratory,Xiangyang 441000,ChinaHubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices,Hubei University of Arts and Science,Xiangyang 441053,China||Hubei Longzhong Laboratory,Xiangyang 441000,China

分类：核科学

中文关键词：InP-based HEMTstrain channeltwo-dimensional electron gaselectron irradiation

英文关键词：InP-based HEMTstrain channeltwo-dimensional electron gaselectron irradiation

刊名：《原子能科学技术》 2023 (12)

页码/页数：2288-2294,7

基金：National Natural Science Foundation of China(11705277)Science and Technology Research Project of Hubei Provin-cial Department of Education(Q20222607)Graduate Quality Engineering Support Project of Hubei University of Arts and Science(YZ3202405)

DOI：10.7538/yzk.2023.youxian.0701