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Laser-assisted Simulation of Dose Rate Effects of Wide Band Gap Semiconductor Devices

TANG Ge XIAO Yao SUN Peng LIU Jingrui ZHANG Fuwang LI Mo

原子能科学技术2023，Vol.57Issue(12)：2314-2325,12.

原子能科学技术2023，Vol.57Issue(12)：2314-2325,12.DOI:10.7538/yzk.2023.youxian.0558

Laser-assisted Simulation of Dose Rate Effects of Wide Band Gap Semiconductor Devices

TANG Ge ¹XIAO Yao ²SUN Peng ³LIU Jingrui ²ZHANG Fuwang ²LI Mo⁴

作者信息

1. Chengdu University of Technology,Chengdu 610059,China||University of Electronic Science and Technology of China,Chengdu 610054,China
2. Chengdu University of Technology,Chengdu 610059,China
3. Microsystem & Terahertz Research Center of CAEP,Chengdu 621000,China
4. University of Electronic Science and Technology of China,Chengdu 610054,China
折叠

摘要

关键词

laser-assisted simulation/dose rate effect/wide band gap semiconductor/conversion factor

Key words

laser-assisted simulation/dose rate effect/wide band gap semiconductor/conversion factor

分类

能源科技

引用本文复制引用

TANG Ge,XIAO Yao,SUN Peng,LIU Jingrui,ZHANG Fuwang,LI Mo..Laser-assisted Simulation of Dose Rate Effects of Wide Band Gap Semiconductor Devices[J].原子能科学技术,2023,57(12):2314-2325,12.

基金项目

National Natural Science Foundation of China(12205028) （12205028）

Natural Science Foundation of Sichuan Province(2022NSFSC1235) （2022NSFSC1235）

Young and Middle-aged Backbone Teacher Foundation of Chengdu University of Technology(10912-JXGG2022-08363) （10912-JXGG2022-08363）

原子能科学技术

OA北大核心CSCDCSTPCD

ISSN：1000-6931

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