太赫兹科学与电子信息学报2023，Vol.21Issue(12)：1403-1409,1416,8.DOI:10.11805/TKYDA2022204
InGaAs/InAlAs光电导太赫兹发射天线的制备与表征
Fabrication and characterization of InGaAs/InAlAs photoconductive terahertz transmitting antenna
摘要
Abstract
Photoconductive antennas are of great scientific and industrial value as the key components for generating and detecting terahertz radiation in terahertz time-domain spectrometers.In this paper,Molecular Beam Epitaxy(MBE)is utilized to prepare InGaAs/InAlAs superlattices as light-absorbing materials for 1 550 nm photoconductive antennas.The high growth quality of the materials is verified by Atomic Force Microscopy(AFM),Photoluminescence(PL),and high-resolution X-ray diffraction.The mesa-structured photoconductive antenna with flat sides is obtained by optimizing the preparation conditions.The fabricated photoconductive terahertz transmitting antenna achieves a spectral width of 4.5 THz in a terahertz time-domain spectroscopy system with a dynamic range of 45 dB.关键词
太赫兹时域光谱仪/光电导天线/分子束外延/InGaAs/InAlAs超晶格Key words
terahertz time-domain spectrometer/photoconductive antenna/Molecular Beam Epitaxy/InGaAs/InAlAs superlattices分类
信息技术与安全科学引用本文复制引用
陈益航,杨成奥,张宇,徐应强,倪海桥,牛智川,杨延召,张桂铭,徐建星,苏向斌,王天放,余红光,石建美,吴斌..InGaAs/InAlAs光电导太赫兹发射天线的制备与表征[J].太赫兹科学与电子信息学报,2023,21(12):1403-1409,1416,8.基金项目
国家自然科学基金资助项目(62127804) （62127804）
