太赫兹科学与电子信息学报2023，Vol.21Issue(12)：1513-1518,6.DOI:10.11805/TKYDA2021363
电离辐射前后双极型晶体管统计特性
Statistical characteristics transformation mechanisms of bipolar transistor before and after irradiation
李顺 1代刚1
作者信息
- 1. 中国工程物理研究院 微系统与太赫兹研究中心,四川 成都 610200||中国工程物理研究院 电子工程研究所,四川 绵阳 621999
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摘要
Abstract
The statistical distribution of bipolar transistors'performance will change after ionizing radiation,from a symmetrical normal distribution before radiation to an asymmetric log-normal distribution.This statistical characteristic conversion lacks a clear physical image.In order to explain this transformation process from the microcosmic level,a large sample of ionizing radiation effect experiments for customized transistors are carried out to obtain the statistical characteristics of base currents and interface trapped charges before and after radiation,and the statistical characteristics of the two are found to be consistent.Based on the analytical physical model of the base current,it is found that the transformation of the base current statistical characteristics before and after radiation are originated from the transformation of the interface trapped charges.Based on the central limit theorem,the physical explanation for the statistical characteristics transformation of interface trapped charges before and after radiation is given,which comes from the physical model of interface defects in the form of multiple random variables.关键词
电离辐射/双极型晶体管/统计特性Key words
irradiation/bipolar transistor/statistical distribution分类
电子信息工程引用本文复制引用
李顺,代刚..电离辐射前后双极型晶体管统计特性[J].太赫兹科学与电子信息学报,2023,21(12):1513-1518,6.
