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Ⅱ-Ⅵ族多元化合物半导体晶体生长及器件研究进展

杨桂芝 俞鹏飞 张嘉伟 介万奇

铸造技术2023,Vol.44Issue(12):1075-1093,19.
铸造技术2023,Vol.44Issue(12):1075-1093,19.DOI:10.16410/j.issn1000-8365.2023.3270

Ⅱ-Ⅵ族多元化合物半导体晶体生长及器件研究进展

Research Progress in Crystal Growth and Devices of Group Ⅱ-Ⅵ Multicomponent Compound Semiconductors

杨桂芝 1俞鹏飞 1张嘉伟 1介万奇2

作者信息

  • 1. 长安大学材料科学与工程学院,陕西西安 710064
  • 2. 西北工业大学凝固技术国家重点实验室,陕西西安 710072||西北工业大学辐射探测材料与器件工信部重点实验室,陕西西安 710072
  • 折叠

摘要

Abstract

Group Ⅱ-Ⅵ multicomponent(ternary and more than ternary)compound semiconductor crystals are a very important class of optoelectronic materials.Most of them are sphalerite structures with direct transition type band gaps.The n-type or p-type semiconductor crystal materials can be obtained by doping with different impurities.These crystals have the characteristics of a large atomic number,high resistivity,large carrier mobility lifetime product,good light absorption coefficient,etc.,and can be used in room temperature radiation detectors,solar cells,Faraday magnetic devices and other fields.In this paper,the structure and physical properties of group Ⅱ-Ⅵ multicomponent compound semiconductor crystals are introduced,and the research progress of crystal growth is reviewed in combination with growth methods.The main applications of the devices are analysed and discussed,and the future development direction of this class of crystal materials is proposed.

关键词

Ⅱ-Ⅵ族多元化合物/半导体/晶体生长/室温辐射探测器/太阳能电池

Key words

group Ⅱ-Ⅵ multicomponent compounds/semiconductors/crystal growth/room temperature radiation detector/solar cell

分类

电子信息工程

引用本文复制引用

杨桂芝,俞鹏飞,张嘉伟,介万奇..Ⅱ-Ⅵ族多元化合物半导体晶体生长及器件研究进展[J].铸造技术,2023,44(12):1075-1093,19.

基金项目

西北工业大学凝固技术国家重点实验室开放课题(SKLSP202318) (SKLSP202318)

陕西省重点研发计划(2022GY-358) (2022GY-358)

铸造技术

1000-8365

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