| 注册
首页|期刊导航|物理学报|含有偏置电压源的非齐次分数阶忆阻混沌电路动力学分析与实验研究

含有偏置电压源的非齐次分数阶忆阻混沌电路动力学分析与实验研究

吴朝俊 方礼熠 杨宁宁

物理学报2024,Vol.73Issue(1):20-34,15.
物理学报2024,Vol.73Issue(1):20-34,15.DOI:10.7498/aps.73.20231211

含有偏置电压源的非齐次分数阶忆阻混沌电路动力学分析与实验研究

Dynamic analysis and experiment of chaotic circuit of non-homogeneous fractional memristor with bias voltage source

吴朝俊 1方礼熠 1杨宁宁2

作者信息

  • 1. 西安工程大学电子信息学院,西安市电气设备互联感知与智能诊断重点实验室,西安 710048
  • 2. 西安理工大学电气工程学院,西安 710048
  • 折叠

摘要

Abstract

A physical memristor has an asymmetric tight hysteresis loop.In order to simulate the asymmetric tight hysteresis curve of the physical memristor more conveniently,a fractional-order diode bridge memristor model with a bias voltage source is proposed in this paper,which can continuously regulate the hysteresis loop.Firstly,based on fractional calculus theory,a fractional order model of a diode bridge memristor with a bias voltage source is established,and its electrical characteristics are analyzed.Secondly,by integrating it with the Jerk chaotic circuit,a non-homogeneous fractional order memristor chaotic circuit model with a bias voltage source is established,and the influence of bias voltage on its system dynamic behavior is studied.Once again,a fractional-order equivalent circuit model is built in PSpice and validated through circuit simulation.The experimental results are basically consistent with the numerical simulation results.Finally,the experiments on the circuit are completed in LabVIEW to validate the correctness and feasibility of the theoretical analysis.The results indicate that the fractional order memristor with bias voltage source can continuously obtain asymmetric tight hysteresis loop by adjusting the voltage of the bias voltage source.As the bias power supply voltage changes,the non-homogeneous fractional order memristor chaotic system exhibits that the period doubling bifurcation turns into chaos due to the symmetry breaking.

关键词

忆阻器/混沌电路/分数阶微积分/电路实验

Key words

memristor/chaotic circuit/fractional calculus/circuit experiment

引用本文复制引用

吴朝俊,方礼熠,杨宁宁..含有偏置电压源的非齐次分数阶忆阻混沌电路动力学分析与实验研究[J].物理学报,2024,73(1):20-34,15.

基金项目

国家自然科学基金(批准号:51507134)和陕西省自然科学基金(批准号:2018JM5068,2021JM-449)资助的课题.Project supported by the National Natural Science Foundation of China(Grant No.51507134)and the Natural Science Foundation of Shaanxi Province,China(Grant Nos.2018JM5068,2021JM-449). (批准号:51507134)

物理学报

OA北大核心CSTPCD

1000-3290

访问量0
|
下载量0
段落导航相关论文