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面向应用的新一代稀磁半导体研究进展

彭毅 赵国强 邓正 靳常青

物理学报2024,Vol.73Issue(1):259-272,14.
物理学报2024,Vol.73Issue(1):259-272,14.DOI:10.7498/aps.73.20231940

面向应用的新一代稀磁半导体研究进展

Recent advances in application-oriented new generation diluted magnetic semiconductors

彭毅 1赵国强 1邓正 1靳常青1

作者信息

  • 1. 中国科学院物理研究所,北京 100190||中国科学院大学物理学院,北京 100049
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摘要

Abstract

Diluted ferromagnetic semiconductors(DMSs)have attracted widespread attention in last decades,owing to their potential applications in spintronic devices.But classical group-Ⅲ-Ⅳ,and-Ⅴ elements based DMS materials,such as(Ga,Mn)As which depend on heterovalent(Ga3+,Mn2+)doping,cannot separately control carrier and spin doping,and have seriously limited chemical solubilities,which are disadvantages for further improving the Curie temperatures.To overcome these difficulties,a new-generation DMS with independent spin and charge doping have been designed and synthesized.Their representatives are Ⅰ-Ⅱ-Ⅴ based Li(Zn,Mn)As and Ⅱ-Ⅱ-Ⅴ based(Ba,K)(Zn,Mn)2As2.In these new materials,doping isovalent Zn2+ and Mn2+ introduces only spins,while doping heterovalent non-magnetic elements introduces only charge.As a result,(Ba,K)(Zn,Mn)2As2 achieves Curie temperature of 230 K,a new record among DMS where ferromagnetic orderings are mediated by itinerate carriers.Herein,we summarize the recent advances in the new-generation DMS materials.The discovery and synthesis of several typical new-generation DMS materials are introduced.Physical properties are studied by using muon spin relaxation,angle-resolved photoemission spectroscopy and pair distribution function.The physical and chemical pressure effects on the title materials are demonstrated.The Andreev reflection junction based on single crystal and the measurement of spin polarization are exhibited.In the end,we demonstrate the potential multiple-parameter heterojunctions with DMSs superconductors and antiferromagnetic materials.

关键词

新一代稀磁半导体/自旋电荷掺杂分离/高居里温度/多组合异质结

Key words

new generation diluted magnetic semiconductors/independent charge and spin doping/high Curie temperature/multiple-parameters heterojunctions

引用本文复制引用

彭毅,赵国强,邓正,靳常青..面向应用的新一代稀磁半导体研究进展[J].物理学报,2024,73(1):259-272,14.

基金项目

国家重点研发计划(批准号:2022YFA1403900)、国家自然科学基金(批准号:11974407)、中国科学院稳定支持基础研究领域青年团队计划(批准号:YSBR-030)和中国科学院青年促进会(批准号:2020007)资助的课题.Project supported by the National Key R&D Program of China(Grant No.2022YFA1403900),the National Natural Science Foundation of China(Grant No.11974407),the Project for Young Scientists in Basic Research of Chinese Academy of Sciences,China(Grant No.YSBR-030),and the Youth Innovation Promotion Association of Chinese Academy of Sciences,China(Grant No.2020007). (批准号:2022YFA1403900)

物理学报

OA北大核心CSTPCD

1000-3290

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