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Influence of Parasitic Parameters on Dynamic Threshold Voltage Hysteresis of Silicon Carbide MOSFETs

Yumeng Cai Tong Sun Peng Sun Zhibin Zhao Xuebao Li Hui Wang Zhong Chen Boyuan Cao

中国电机工程学会电力与能源系统学报（英文版）2023，Vol.9Issue(6)：2251-2262,12.

中国电机工程学会电力与能源系统学报（英文版）2023，Vol.9Issue(6)：2251-2262,12.DOI:10.17775/CSEEJPES.2022.00480

Influence of Parasitic Parameters on Dynamic Threshold Voltage Hysteresis of Silicon Carbide MOSFETs

Yumeng Cai ¹Tong Sun ¹Peng Sun ¹Zhibin Zhao ¹Xuebao Li ¹Hui Wang ²Zhong Chen ¹Boyuan Cao³

作者信息

1. State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources,North China Electric Power University,Beijing 102206,China
2. Department of Electrical Engineering,University of Arkansas,Fayetteville,AR 72701,USA
3. Electric Power Research Institute,State Grid Shanghai Electric Power Company,Shanghai 200437,China
折叠

摘要

关键词

Dynamic hysteresis curve/parasitic parameters/silicon carbide(SiC)MOSFETs/switching characteristics/threshold voltage hysteresis

Key words

Dynamic hysteresis curve/parasitic parameters/silicon carbide(SiC)MOSFETs/switching characteristics/threshold voltage hysteresis

引用本文复制引用

Yumeng Cai,Tong Sun,Peng Sun,Zhibin Zhao,Xuebao Li,Hui Wang,Zhong Chen,Boyuan Cao..Influence of Parasitic Parameters on Dynamic Threshold Voltage Hysteresis of Silicon Carbide MOSFETs[J].中国电机工程学会电力与能源系统学报（英文版）,2023,9(6):2251-2262,12.

基金项目

This work was supported by the Science and Technology Project of State Grid Corporation of China(No.52094021N012). （No.52094021N012）

中国电机工程学会电力与能源系统学报（英文版）

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ISSN：2096-0042

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