电波科学学报2023，Vol.38Issue(6)：1040-1047,8.DOI:10.12265/j.cjors.2022261
高截止频率肖特基二极管仿真模型研究
Study on simulation model of high cut-off frequency Schottky diode
摘要
Abstract
Based on the basic structure of surface channel planar Schottky barrier diode,and adopt GaAs 0.15 μm pHEMT process,a Schottky diode model of the vertical channel extended span air bridge is proposed.The influence of different anode diameters on the Schottky diode cascade resistance is studied.The simulation results of S parameters of Schottky diode models with different pad spacing are compared and analyzed.The optimal air bridge length is obtained.The TCAD model of diode Schottky junction with optimal pad spacing is simulated.The SPICE parameters of Schottky diode are extracted according to the simulation characteristic curve.The experimental results show that the diode has an extremely low zero bias junction capacitance,and the cut-off frequency is up to 9 THz.The simulation results agree well with the measured results,and can be used in the terahertz band.关键词
太赫兹/肖特基二极管/GaAs/垂直沟道/截止频率Key words
terahertz/Schottky diode/Gallium arsenide(GaAs)/vertical channel/cut-off frequency分类
信息技术与安全科学引用本文复制引用
余蒋平,李少甫,唐颖颖..高截止频率肖特基二极管仿真模型研究[J].电波科学学报,2023,38(6):1040-1047,8.基金项目
国家自然科学基金委员会-中国工程物理研究院NSAF联合基金(U1830201) （U1830201）
