2～6GHz 100W高效率平衡式功率放大器的研制OACSTPCD
Development and Design of 2 GHz to 6 GHz,100 Watt,High Efficient,Balanced Power Amplifier
为解决传统宽带大功率放大器工作效率低的问题,采用新型电阻电抗连续B/J类功放模式拓展晶体管高效率的输出负载阻抗空间,从而提高宽带功放的漏级输出效率.提出了一款基于 0.25µm栅长的氮化镓高电子迁移率晶体管(GaN HEMT)的平衡式功放.该功放将LC匹配网络和切比雪夫阻抗变换器相结合实现GaN HEMT器件宽带输入输出阻抗匹配,并利用 3 dB Lange耦合器实现宽带平衡式功率合成.在连续波测试条件下,该平衡式功放在 2～6 GHz频带内输出功率大于100 W,漏极效率大于45%,功率增益大于9.0 dB,抗负载失配比优于5:1.
In this paper,in order to solve the problem of low efficiency of traditional wideband high-power amplifier,a new type of resistive reactance continuous B/J power amplifier mode is adopted to expand the output load impedance space of transistor with high efficiency.As a result,the drain stage output efficiency of broadband power amplifier is improved.Then,a balanced power amplifier(PA)based on 0.25µm gate-length GaN HEMT is proposed.The PA combines LC matching network and Chebyshev impedance converter to realize broadband input and output impedance matching of GaN HEMT device,and utilizes a 3 dB Lange coupler to achieve broadband balanced power combination.Under the operating condition of continuous wave(CW),the proposed balanced PA has an output power greater than 100 W,drain efficiency greater than 45%,power gain greater than 9 dB,and anti-load mismatch better than 5:1 in the frequency range of 2 GHz to 6 GHz.
来晋明;徐会博;李志友;倪涛;王超杰;银军;王海龙;马晓华
西安电子科技大学微电子学院,西安 710071||中国电子科技集团公司第二十九研究所,成都 610036中国电子科技集团公司第十三研究所,石家庄 050050中国电子科技集团公司第二十九研究所,成都 610036西安电子科技大学微电子学院,西安 710071
电子信息工程
GaN HEMT宽带平衡式功率合成功率放大器
GaN HEMTbroadbandbalanced power combinationpower amplifier
《电子科技大学学报》 2024 (001)
8-13 / 6
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