红外与毫米波学报2023，Vol.42Issue(6)：731-736,6.DOI:10.11972/j.issn.1001-9014.2023.06.004
InPBi禁带下红外光致发光效率的Bi组分依赖研究
Bi composition-dependent study of infrared photoluminescence efficiency in InPBi bandgap
摘要
Abstract
The photoluminescence(PL)transitions of the dilute-bismide InPBi originate mainly from the defect-related processes,and manifest the properties of long wavelength,broad linewidth and strong emission.To further clarify the PL efficiency issues,we carry out excitation power-dependent PL spectral analyses on a series of InPBi samples with dif-ferent Bi compositions in this work.The PL lineshape changes significantly and the dominant emission redshifts as the Bi composition increases.Meanwhile,the excitation power-dependent evolution of the PL integral intensity indicates that the PL efficiency enhances firstly and then drops as the Bi composition rises,and reaches the maximum with a Bi composition of 0.5%.The enhancement of the PL efficiency is ascribed to the Bi trapping holes to lower the nonradioac-tive recombination on one hand,and to the Bi surfactant effect on the other hand.Nevertheless,the high Bi component brings excessive impurities and the Bi-related advantages are suppressed,which results in low PL efficiency.These re-sults are beneficial to the understanding of the infrared emission performance of InPBi and suggest InPBi as a potential semiconductor for infrared optoelectronic applications.关键词
变激发功率/InPBi/光致发光效率Key words
excitation power dependence/InPBi/photoluminescence efficiency分类
数理科学引用本文复制引用
杨自力,王嫚,余灯广,朱亮清,邵军,陈熙仁..InPBi禁带下红外光致发光效率的Bi组分依赖研究[J].红外与毫米波学报,2023,42(6):731-736,6.基金项目
国家自然科学基金(11974368、12274429)、上海市科学技术委员会(22QA1410600、20142201000)、中国科学院青年创新促进会(2019242) Supported by NSFC(11974368、12274429),STCSM(22QA1410600、20142201000),YIPA(2019242) （11974368、12274429）
