| 注册
首页|期刊导航|红外与毫米波学报|MoS2和MoTe2同质结和异质结中的表面电势排列

MoS2和MoTe2同质结和异质结中的表面电势排列

江聪 张帅君 李玉莹 王文静 夏辉 李天信

红外与毫米波学报2023,Vol.42Issue(6):743-747,5.
红外与毫米波学报2023,Vol.42Issue(6):743-747,5.DOI:10.11972/j.issn.1001-9014.2023.06.006

MoS2和MoTe2同质结和异质结中的表面电势排列

Surface potential alignment in MoS2 and MoTe2 homo-and hetero-junctions

江聪 1张帅君 2李玉莹 3王文静 4夏辉 5李天信3

作者信息

  • 1. 上海理工大学 理学院,上海 200093||中国科学院上海技术物理研究所 红外物理国家重点实验室,上海 200083
  • 2. 中国科学院上海技术物理研究所 红外物理国家重点实验室,上海 200083
  • 3. 中国科学院上海技术物理研究所 红外物理国家重点实验室,上海 200083||中国科学院大学,北京 100049
  • 4. 中国科学院上海技术物理研究所 红外物理国家重点实验室,上海 200083||上海师范大学 数理学院,上海 200234
  • 5. 上海理工大学 理学院,上海 200093||中国科学院上海技术物理研究所 红外物理国家重点实验室,上海 200083||中国科学院大学,北京 100049
  • 折叠

摘要

Abstract

In transition metal dichalcogenides(TMD)flakes,the geometry,such as layer thickness,significant-ly tune the electronic properties,including bandgap,electron affinity and Fermi level.Such characteristic offers a high degree of freedom to tune the functionality of semiconductor device,once the volatile electronic properties are precisely determined.However,to date,there are still significant uncertainties in determining the Fermi-level alignment of TMD homo-or hetero-junctions,which might lead to significant deviations of band-bending and thus device performance.Here,we utilize the Scanning Kelvin Probe Microscopy(SKPM)to characterize the surface-potential/Fermi-level alignment of TMD homo-or hetero-junctions.Through this effort,a distinct phe-nomenon is verified where the Fermi-levels of MoS2 and MoTe2 shift towards the intrinsic level with an increasing layer thickness(in other words,the background doping concentration is continuously lowering).Moreover,we show the significant impact of surface contamination(molecular scale)on the surface potential of monolayer TMD.Finally,we fabricate a MoTe2/MoS2 heterojunction,in which we observe the wide depletion region and large photoresponse.Together,those findings might offer a reference to precisely stack van der Waals(vdW)lay-ers as designed for both electronic and optoelectronic applications.

关键词

表面电势/过渡金属硫族化合物(TMD)/扫描开尔文探针显微镜(SKPM)/层厚

Key words

surface potential/transition metal dichalcogenides(TMD)/Scanning Kevin Probe Microscopy(SKPM)/layer thickness

分类

数理科学

引用本文复制引用

江聪,张帅君,李玉莹,王文静,夏辉,李天信..MoS2和MoTe2同质结和异质结中的表面电势排列[J].红外与毫米波学报,2023,42(6):743-747,5.

基金项目

Supported by the National Natural Science Foundation of China(11991063,62004207,61725505,62104118) (11991063,62004207,61725505,62104118)

the Shanghai Science and Technology Committee(2019SHZDZX01,19XD1404100,20YF1455900,20ZR1474000) (2019SHZDZX01,19XD1404100,20YF1455900,20ZR1474000)

the Strategic Priority Research Program of Chinese Acade-my of Sciences(XDB43010200) (XDB43010200)

the Youth Innovation Promotion Association CAS(2018276) (2018276)

红外与毫米波学报

OA北大核心CSCDCSTPCD

1001-9014

访问量0
|
下载量0
段落导航相关论文