常州大学学报（自然科学版）2024，Vol.36Issue(1)：9-17,9.DOI:10.3969/j.issn.2095-0411.2024.01.002
Si基SiC薄膜物理制备工艺研究进展
Advances in physical preparation process of SiC thin films on Si substrates
摘要
Abstract
With the continuous improvement of the integration degree of micro/nano electronic de-vices,the replacement of SiC bulk single crystal with Si based SiC films is not only conducive to reduc-ing the production cost,but also compatible with Si based large-scale integrated circuits.Therefore,the preparation of SiC thin films on Si substrates has aroused great interest.In this review,the re-search progress of four main physical preparation processes of Si based SiC thin films,including mag-netron sputtering,molecular beam epitaxy,ion beam sputtering and ion implantation,is reviewed.The effects of various processes on the properties of thin films are briefly described.Further,the ad-vantages,disadvantages and existing problems of various processes are reviewed,and the future devel-opment direction of Si-based SiC thin films is also pointed out.关键词
SiC薄膜/磁控溅射/分子束外延/离子束溅射/离子注入Key words
SiC thin films/magnetron sputtering/molecular beam epitaxy/ion beam sputtering/ion implantation分类
通用工业技术引用本文复制引用
苏江滨,朱秀梅,季雪梅,祁昊,潘鹏,何祖明..Si基SiC薄膜物理制备工艺研究进展[J].常州大学学报（自然科学版）,2024,36(1):9-17,9.基金项目
江苏省自然科学基金资助项目(BK20191453) （BK20191453）
江苏省研究生科研创新计划资助项目(KYCX21_2819,KYCX21_2825). （KYCX21_2819,KYCX21_2825）
