强激光与粒子束2024，Vol.36Issue(1)：30-36,7.DOI:10.11884/HPLPB202436.230214
基于波形测试的异质结双极型晶体管器件负载失配影响分析
Load mismatch effects to heterojunction bipolar transistor device based on waveform measurement
摘要
Abstract
Under the impact of high-power electromagnetic pulses,RF integrated microsystems are prone to generate load mismatch,which may lead to system failure or even damage.Based on a real-time waveform test method,this paper analyzes the mechanism of load mismatch of RF devices leading to device damage.This method utilizes vector network analyzer as the main instrument,obtaining the real-time voltage and current waveforms with reflection signal and phase reference module.Active load-pull technique is used to simulate high power coupled electromagnetic pulse injection and ruggedness test under 39∶1 VSWR is done.Furthermore,harmonic source injection is newly applied to simulate the electromagnetic interference caused by harmonics,obtaining the harmonic impedance mismatch characteristics of the device.The test results of actual heterojunction bipolar transistor device indicate that the combination of fundamental and harmonic interference components causes the transient peak value of the output voltage to be higher,which is more likely to damage the device.Hence the fundamental and harmonic components should be considered when conducting electromagnetic protection.关键词
负载失配/波形测试/异质结双极型晶体管/电磁安全防护Key words
load mismatch/waveform test/heterojunction bipolar transistor/electromagnetic protection分类
信息技术与安全科学引用本文复制引用
张津豪,苏江涛,谢炜誉,邵世缘,徐魁文,李文钧..基于波形测试的异质结双极型晶体管器件负载失配影响分析[J].强激光与粒子束,2024,36(1):30-36,7.基金项目
国家自然科学基金项目(62293493) （62293493）
科技部重点研发计划(2020YFB1804903) （2020YFB1804903）
