强激光与粒子束2024，Vol.36Issue(1)：43-48,6.DOI:10.11884/HPLPB202436.230209
基于碳化硅等离子体器件的功率脉冲锐化技术
Power pulse sharpening technology based on silicon carbide plasma devices
摘要
Abstract
A full-circuit simulation model of silicon carbide Drift Step Recovery Diode(DSRD)and Diode Avalanche Shaper(DAS)was built based on Sentaurus.By use of simulation,this paper investigates the capability of silicon carbide plasma devices in pulse sharpening and explains the mechanism of pulse sharpening achieved by these two devices through the plasma concentration distribution inside the devices.With the help of a silicon carbide DSRD,it is possible to reduce the pulse front of voltage pulses with peaks in excess of kilovolts to 300 ps.The combination of the silicon carbide DSRD and DAS can output voltage pulses with a pulse front of 35 ps and a peak of more than two kilovolts.Simulations and experiments show that when the trigger pulse is matched to the silicon carbide DAS,fast turn-on and turn-off can be achieved.Thanks to the magical phenomenon of silicon carbide DAS,it can reduce the half-height width of pulses with peak values above 2 kV to the order of 100 ps.Through spectrum analysis,it is found that after the pulse is sharpened by DAS,its-30 dB spectral width is expanded by a factor of 37 to 7.4 GHz.关键词
碳化硅/漂移阶跃恢复二极管/雪崩整形二极管/超宽带Key words
silicon carbide/drift step recovery diode/diode avalanche shaper/ultra wide band分类
信息技术与安全科学引用本文复制引用
郭登耀,汤晓燕,宋庆文,周瑜,郭京凯,孙乐嘉,袁昊,杜丰羽,张玉明..基于碳化硅等离子体器件的功率脉冲锐化技术[J].强激光与粒子束,2024,36(1):43-48,6.基金项目
国家自然科学基金项目(62174123) （62174123）
