人工晶体学报2024，Vol.53Issue(1)：1-11,11.
GaSb单晶研究进展
Research Progress of GaSb Single Crystal
摘要
Abstract
In recent years,antimonide infrared technology has developed rapidly and has become one of the important development directions of semiconductor technology.Gallium antimonide(GaSb),as a typical Ⅲ-Ⅴ compound semiconductor,has become a key substrate material for antimonide infrared optoelectronics due to its excellent properties.The demand for GaSb wafers is increasing,and higher requirements are also put forward with the maturing and application of antimonide infrared technology.The properties of epitaxial materials and devices are directly affected by substrate quality,so that GaSb substrates are required to have the characteristics of large size,lower defect density,better surface quality and consistency.The properties,growth methods,research progress at home and abroad,as well as applications of GaSb crystal are reviewed in this paper,and the development prospects are also analyzed.关键词
锑化镓/化合物半导体/锑化物/晶体/红外光电器件Key words
GaSb/compound semiconductor/antimonide/crystal/infrared optoelectronics分类
数理科学引用本文复制引用
刘京明,杨俊,赵有文,杨成奥,蒋洞微,牛智川..GaSb单晶研究进展[J].人工晶体学报,2024,53(1):1-11,11.基金项目
国家自然科学基金(62374161) （62374161）
